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A calibration of the localized vibrational mode absorption line due to isovalent boron impurities in gallium arsenide
| Content Provider | Scilit |
|---|---|
| Author | Addinall, R. Newman, R. C. Okada, Y. Orito, F. |
| Copyright Year | 1992 |
| Description | Journal: Semiconductor Science and Technology GaAs samples doped with boron up to $(B)=3*10^{18}$ $cm^{-3}$ have been analysed by local vibrational mode infrared absorption spectroscopy and by SIMS. A calibration has been established indicating that an integrated absorption of 1 $cm^{-2}$ in the LVM line at 517 $cm^{-1}$ due to$ $^{11}$B_{Ga}$ corresponds to $11.0+or-0.5*10^{16}$ boron atoms per $cm^{3}$. This calibration agrees with and extends a recent calibration proposed by Alt and Maier. |
| Related Links | http://iopscience.iop.org/article/10.1088/0268-1242/7/11/003/pdf |
| Ending Page | 1309 |
| Page Count | 4 |
| Starting Page | 1306 |
| ISSN | 02681242 |
| e-ISSN | 13616641 |
| DOI | 10.1088/0268-1242/7/11/003 |
| Journal | Semiconductor Science and Technology |
| Issue Number | 11 |
| Volume Number | 7 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1992-11-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Semiconductor Science and Technology Condensed Matter Physics Gallium Arsenide Absorption Line |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Chemistry Electronic, Optical and Magnetic Materials Condensed Matter Physics Electrical and Electronic Engineering |
