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Ge Distribution in $Ge_{n}/Si_{m}$ Strained-Layer Superlattices
| Content Provider | Scilit |
|---|---|
| Author | Miki, Kazushi Unoki, Shigeyuki Matsuhata, Hirofumi Sakamoto, Kunihiro Sakamoto Kunihiro Sakamoto, Tsunenori Sakamoto Tsunenori |
| Copyright Year | 1992 |
| Description | Journal: Japanese Journal of Applied Physics $Ge_{ n }/Si_{ m }$ strained-layer superlattices (SLSs) grown by molecular beam epitaxy were investigated by the X-ray diffraction method. The diffraction intensities of $Ge_{4}/Si_{12}$ SLSs were analyzed with surface segregation models. It has been found that surface segregation does not involve 1 ML but 2-3 ML of the Ge top layer, and that the smearing decay length is about 4.5 ML. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.31.L1511/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.31.l1511 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 11A |
| Volume Number | 31 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1992-11-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics X Ray Diffraction Molecular Beam Epitaxy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
