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Observation of Direct Band Gap Properties in $Ge_{n}Si_{m}$ Strained-Layer Superlattices
| Content Provider | Scilit |
|---|---|
| Author | Okumura, Hajime Miki, Kazushi Misawa, Shunji Sakamoto, Kunihiro Sakamoto, Tsunenori Yoshida, Sadafumi |
| Copyright Year | 1989 |
| Description | Journal: Japanese Journal of Applied Physics Photoluminescence and optical absorption measurements were carried out for $Ge_{ n }Si_{ m }$ strained-layer superlattices grown by molecular beam epitaxy using a phase-locked epitaxy technique. A $Ge_{4}Si_{12}$ superlattice showed intense emission in the near-infrared region, and its absorption coefficient followed the (h v-E _{g}$)^{1/2}$ law, where h v is the energy of incident light and E$ _{g}$ is the band gap energy. These results suggest that the $Ge_{4}Si_{12}$ sample has a direct band gap. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.28.L1893/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.28.l1893 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 11A |
| Volume Number | 28 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 1989-11-01 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Photoluminescence |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |