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Effect of Trimethyl Aluminium Surface Pretreatment on Atomic Layer Deposition Al 2 O 3 Ultra-Thin Film on Si Substrate
| Content Provider | Scilit |
|---|---|
| Author | Min, Xu Hong-Liang, Lu Shi-Jin, Ding Liang, Sun Wei, Zhang Li-Kang, Wang |
| Copyright Year | 2005 |
| Description | Journal: Chinese Physics Letters Ultra-thin $Al_{2}O_{3}$ dielectric films have been deposited on Si substrates by using trimethyl aluminium (TMA) and water as precursors in an atomic layer deposition (ALD) system. Growth of the interfacial layer between ultra-thin $Al_{2}O_{3}$ and the Si substrate is effectively suppressed by a long-time TMA surface pretreatment of the Si substrate prior to $Al_{2}O_{3}$ atomic layer deposition. High resolution transmission electron microscopy (TEM) images show that the thickness of the interfacial layer is reduced to be 0.5 nm for the sample with TMA pretreatment lasting 3600 s. The x-ray photoelectron spectroscopy results indicate that the $Al_{2}O_{3}$ film deposited on the TMA-pretreated Si surface exhibits very good thermal stability. However, a hysteresis of about 50 mV is observed in the C–V curve of the samples with the TMA pretreatment. |
| Related Links | http://iopscience.iop.org/article/10.1088/0256-307X/22/9/077/pdf |
| Ending Page | 2421 |
| Page Count | 4 |
| Starting Page | 2418 |
| ISSN | 0256307X |
| e-ISSN | 17413540 |
| DOI | 10.1088/0256-307x/22/9/077 |
| Journal | Chinese Physics Letters |
| Issue Number | 9 |
| Volume Number | 22 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2005-08-25 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics Letters Coatings and Films Layer Deposition Tma Pretreatment Atomic Layer Ultra Thin Films Have Been Deposited |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
