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Characterization of Al$ _{2}$ O$ _{3}$ Thin Films on GaAs Substrate Grown by Atomic Layer Deposition
| Content Provider | Scilit |
|---|---|
| Author | Hong-Liang, Lu Yan-Bo, Li Min, Xu Shi-Jin, Ding Liang, Sun Wei, Zhang Li-Kang, Wang |
| Copyright Year | 2006 |
| Description | Journal: Chinese Physics Letters $Al_{2}O_{3}$ thin films are grown by atomic layer deposition on GaAs substrates at 300°C. The structural properties of the $Al_{2}O_{3}$ thin film and the $Al_{2}O_{3}$/GaAs interface are characterized using x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and x-ray photoelectron spectroscopy (XPS). The XRD results show that the as-deposited $Al_{2}O_{3}$ film is amorphous. For 30 atomic layer deposition growth cycles, the thicknesses of the $Al_{2}O_{3}$ thin film and the interface layer from the HRTEM are 3.3 nm and 0.5 nm, respectively. XPS analyses reveal that the $Al_{2}O_{3}$/GaAs interface is almost free from $As_{2}O_{3}$. |
| Related Links | http://iopscience.iop.org/article/10.1088/0256-307X/23/7/075/pdf |
| Ending Page | 1931 |
| Page Count | 3 |
| Starting Page | 1929 |
| ISSN | 0256307X |
| e-ISSN | 17413540 |
| DOI | 10.1088/0256-307x/23/7/075 |
| Journal | Chinese Physics Letters |
| Issue Number | 7 |
| Volume Number | 23 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2006-06-28 |
| Access Restriction | Open |
| Subject Keyword | Journal: Chinese Physics Letters Thin Film Layer Deposition Atomic Layer |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy |
