Influences of annealing on structural and compositional properties of Al$ _{2}$ O$ _{3}$ thin films grown on 4H–SiC by atomic layer deposition

Content Provider	Scilit
Author	Tian, Li-Xin Zhang, Feng Shen, Zhan-Wei Yan, Guo-Guo Liu, Xing-Fang Zhao, Wan-Shun Wang, Lei Sun, Guo-Sheng Zeng, Yi-Ping
Copyright Year	2016
Description	Journal: Chinese Physics B Annealing effects on structural and compositional performances of $Al_{2}O_{3}$ thin films on 4H–SiC substrates are studied comprehensively. The $Al_{2}O_{3}$ films are grown by atomic layer deposition through using trimethylaluminum and $H_{2}$O as precursors at 300 °C, and annealed at various temperatures in ambient $N_{2}$ for 1 min. The $Al_{2}O_{3}$ film transits from amorphous phase to crystalline phase as annealing temperature increases from 750 °C to 768 °C. The refractive index increases with annealing temperature rising, which indicates that densification occurs during annealing. The densification and grain formation of the film upon annealing are due to crystallization which is relative with second-nearest-neighbor coordination variation according to the x-ray photoelectron spectroscopy (XPS). Although the binding energies of Al 2p and O 1s increase together during crystallization, separations between Al 2p and O 1s are identical between as-deposited and annealed sample, which suggests that the nearest-neighbour coordination is similar.
Related Links	http://iopscience.iop.org/article/10.1088/1674-1056/25/12/128104/pdf
ISSN	16741056
e-ISSN	20583834
DOI	10.1088/1674-1056/25/12/128104
Journal	Chinese Physics B
Issue Number	12
Volume Number	25
Language	English
Publisher	IOP Publishing
Publisher Date	2016-11-29
Access Restriction	Open
Subject Keyword	Journal: Chinese Physics B
Content Type	Text
Resource Type	Article
Subject	Physics and Astronomy