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Smooth and Vertical Etching of GaAs/GaInP/AlGaInP Using Inductively Coupled $Cl_{2}/BCl_{3}/CH_{4}$Plasma
| Content Provider | Scilit |
|---|---|
| Author | Hao, Zhibiao Han, Shuo Ren, Fan Xiong, Bing Sun, Changzheng Luo, Yi |
| Copyright Year | 2004 |
| Description | Journal: Japanese Journal of Applied Physics The inductively coupled plasma (ICP) etching of a GaAs/GaInP/AlGaInP heterostructure is studied using various gas mixtures. It is found that gas chemistry has a significant influence on the etch profile of the heterostructure, which is crucial for the fabrication of ridge/rib structures on AlGaInP-based materials. The self-masking effects of both aluminum oxide and $InCl_{x}$ cause rough etched surfaces and sidewalls. Using $Cl_{2}/BCl_{3}/CH_{4}$ chemistry, the smooth and vertical etching of a GaAs/GaInP/AlGaInP heterostructure has been realized at a moderate etch rate. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.43.8304/pdf |
| Ending Page | 8307 |
| Page Count | 4 |
| Starting Page | 8304 |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.43.8304 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 12 |
| Volume Number | 43 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2004-12-09 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Quantum Science and Technology Etching of a Gaas/gainp/algainp Heterostructure |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
