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GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Tetraethylorthosilicate SiO2Gate Insulator on AlGaN/GaN Heterostructure
| Content Provider | Scilit |
|---|---|
| Author | Ao, Jin-Ping Nakatani, Katsutoshi Ohmuro, Keisuke Sugimoto, Masahiro Hu, Cheng-Yu Sogawa, Yuji Ohno, Yasuo |
| Copyright Year | 2010 |
| Description | Journal: Japanese Journal of Applied Physics GaN metal–oxide–semiconductor field-effect transistors (MOSFETs) with a tetraethylorthosilicate (TEOS) $SiO_{2}$ insulator were developed and evaluated using an AlGaN/GaN HFET structure as the source and drain regions. Operation up to a gate voltage of 10 V was realized at a low gate leakage current. A new method of measuring the mobility of a MOSFET was developed to prevent the effect of hysteresis, in which a relay was used to switch between current measurement and capacitance measurement at the same gate voltage. The maximum field-effect mobility is approximately 45 $cm^{2}$ $V^{-1}$ $s^{-1}$ at an interface state density of 1.02 $×10^{13}$ $cm^{-2}$ $eV^{-1}$. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.49.04DF09/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.49.04df09 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 4 |
| Volume Number | 49 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2010-04-20 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Effect Transistors Semiconductor Field Tetraethylorthosilicate |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
