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Normally-Off AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier
| Content Provider | Scilit |
|---|---|
| Author | Kim, Dong-Seok Im, Ki-Sik Kang, Hee-Sung Kim, Ki-Won Bae, Sung-Bum Mun, Jae-Kyoung Nam, Eun-Soo Lee, Jung-Hee |
| Copyright Year | 2012 |
| Description | Journal: Japanese Journal of Applied Physics The recessed-gate AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOSHFETs) with a p-GaN back-barrier studied in this work exhibited much lower buffer leakage current than those without the back-barrier. The threshold voltage of the device with the p-GaN back-barrier was controlled by varying the depth of gate recess etching, and a value as high as 2.9 V was obtained with deep gate-recess etching into the channel layer. The device structure has the advantage of both low leakage current and high threshold voltage, which is important for power-switching applications. In contrast, the performance parameters of the device, such as subthreshold slope and field-effect mobility, can be degraded owing to increased plasma damage with increasing recess depth. |
| Related Links | http://iopscience.iop.org/article/10.1143/JJAP.51.034101/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.1143/jjap.51.034101 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 3R |
| Volume Number | 51 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2012-02-22 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
