Loading...
Please wait, while we are loading the content...
Similar Documents
The role of self interstitials in As+ diffusion of implanted silicon
| Content Provider | Scilit |
|---|---|
| Author | Parisini, A. Bourret, A. Armigliato, A. |
| Copyright Year | 2021 |
| Description | Arsenic implanted specimens after liquid phase epitaxy followed by annealing treatment were studied in the range 450° C-900° C. A detailed analysis of As and interstitial profiles reveals that arsenic diffuses, starting from 550° C, in two stages : as an interstitial-arsenic complex for 550° C ≤ T ≤ 650° C and independently of interstitials for T ≥ 750* C. It is shown that interstitials are created during the liquid to solid transformation prior to the annealing treatments. |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-04292-6&isbn=9781003069621&format=googlePreviewPdf |
| Ending Page | 496 |
| Page Count | 6 |
| Starting Page | 491 |
| DOI | 10.1201/9781003069621-79 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2021-01-31 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1987 Metallurgy and Metallurgical Engineering Applied Physics Treatment Interstitials Arsenic Interstitial Profiles Implanted Specimens Solid Transformation Liquid Phase Profiles Reveals |
| Content Type | Text |
| Resource Type | Chapter |