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Defects generated by oxidation of BF 2 + implanted silicon
| Content Provider | Scilit |
|---|---|
| Author | Albin, S. Lambert, R. Davidson, S. M. Beale, M. I. J. |
| Copyright Year | 2020 |
| Description | Oxidation of silicon implanted with doses of $10^{14}$ $BF_{2} ^{+}$ $cm^{-2}$ and above generated a high density (about $10^{8}$ $cm^{-2}$) of stacking faults and dislocations. There is a critical $BF_{2} ^{+}$ dose between $5×10^{13}$ and $10^{14}$ $cm^{-2}$ for stacking fault generation. The density of stacking faults generated during 950°C oxidation was found to be lower than that from 900° C oxidation. TEM studies revealed this to be due to fault annihilation by the interaction of orthogonal stacking faults. EBIC studies showed the implantation induced defects to be electrically active. Pre-oxidation annealing was found to be effective in reducing the density of implantation induced defects. Book Name: Microscopy of Semiconducting Materials, 1983 |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2006-0-01873-7&isbn=9781003069614&doi=10.1201/9781003069614-37&format=pdf |
| Ending Page | 246 |
| Page Count | 6 |
| Starting Page | 241 |
| DOI | 10.1201/9781003069614-37 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-11-25 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microscopy of Semiconducting Materials, 1983 Metallurgy and Metallurgical Engineering Silicon Implantation Defects Annealing Dislocations |
| Content Type | Text |
| Resource Type | Chapter |
