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EUV Lithography
| Content Provider | Scilit |
|---|---|
| Author | Wurm, Stefan Kaiser, Winfried Dinger, Udo Müllender, Stephan Fontaine, Bruno La Wood, Obert R. Neisser, Mark |
| Copyright Year | 2020 |
| Description | Extreme164 ultraviolet lithography (EUVL) is an optical lithography technology that has many similarities to conventional optical lithography. The optical imaging process follows Abbe and Rayleigh [1,2], and EUVL systems make use of reduction optics, mask and wafer scanning, and alignment and focusing architectures that are similar to those found in current optical exposure tools. Two fundamental properties of an optical projection system are resolution (RES) and depth of focus (DOF) [1–3]: 4.1 RES = k 1 ⋅ λ NA 4.2 DOF = ± k 2 ⋅ λ NA 2 Book Name: Microlithography |
| Related Links | https://content.taylorfrancis.com/books/download?dac=C2011-0-03868-5&isbn=9781315117171&doi=10.1201/9781315117171-4&format=pdf |
| Ending Page | 246 |
| Page Count | 84 |
| Starting Page | 163 |
| DOI | 10.1201/9781315117171-4 |
| Language | English |
| Publisher | Informa UK Limited |
| Publisher Date | 2020-05-01 |
| Access Restriction | Open |
| Subject Keyword | Book Name: Microlithography Telecommunications Optical Dof Lithography Rayleigh Architectures Wafer Euvl |
| Content Type | Text |
| Resource Type | Chapter |