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320×256 HgCdTe IR FPA with a built-in shortwave cut-off filter
| Content Provider | Scilit |
|---|---|
| Author | Vasilyev, V. V. Varavin, V. S. Dvoretsky, S. A. Marchishin, I. V. Mikhailov, N. N. Predein, A. V. Remesnik, V. G. Sabinina, I. V. Sidorov, Yu.G. Susliakov, A. O. |
| Copyright Year | 2010 |
| Abstract | A photovoltaic detector design based on the graded band gap HgCdTe MBE structure with high conductivity layer (HCL) at interface, which provides photodiodes series resistance and a shortwave cut.off filter is developed. The optimal HCL parameters giving high quantum efficiency and minimal noise equivalent temperature difference were determined by calculations and experimentally confirmed. The hybrid 320×256 IR FPA operating in 8–12 μm spectral range was fabricated. The threshold power responsivity and minimal noise equivalent temperature difference values at wavelength maximum were 1.02×10−7 W/cm2, 4.1×108 V/W and 27 mK, respectively. |
| Related Links | http://www.degruyter.com/dg/viewarticle.fullcontentlink:pdfeventlink/$002fj$002foere.2010.18.issue-3$002fs11772-010-1031-x$002fs11772-010-1031-x.pdf/s11772-010-1031-x.pdf?t:ac=j$002foere.2010.18.issue-3$002fs11772-010-1031-x$002fs11772-010-1031-x.xml |
| ISSN | 12303402 |
| e-ISSN | 18963757 |
| DOI | 10.2478/s11772-010-0031-x |
| Journal | Opto-Electronics Review |
| Issue Number | 3 |
| Volume Number | 18 |
| Language | English |
| Publisher | Walter de Gruyter GmbH |
| Publisher Date | 2010-06-12 |
| Access Restriction | Open |
| Subject Keyword | Opto-electronics Review Optics Photovoltaic Detector Mbe Hgcdte Structure Fpa. Cut Off Filter Series Resistance Band Gap Quantum Efficiency Journal: Opto-Electronics Review, Vol- 18, Issue- 1 |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Science Electrical and Electronic Engineering Radiation |
