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Linear HgCdTe IR FPA 288×4 with bidirectional scanning
| Content Provider | Scilit |
|---|---|
| Author | Vasilyev, V. V. Predein, A. V. Varavin, V. S. Mikhailov, N. N. Dvoretsky, S. A. Gumenjuk-Sichevska, J. V. Golenkov, A. G. Reva, V. P. Sabinina, I. V. Sidorov, Yu.G. Susliakov, A. O. Sizov, F. F. Aseev, A. L |
| Copyright Year | 2010 |
| Abstract | The long wavelength (8–12 μm) IR FPA 288×4 based on a hybrid assembly of n+-p diode photosensitive arrays (PA) of HgCdTe (MCT) MBE-grown structures and time delay integration (TDI) readout integrated circuits (ROIC) with bidirectional scanning have been developed, fabricated, and investigated. The p-type MCT structures were obtained by thermal annealing of as-grown n-type material in inert atmosphere. The MCT photosensitive layer with the composition 0.20–0.23 of mole fraction of CdTe was surrounded by the wide gap layers to decrease the recombination rate and surface leakage current. The diode arrays were fabricated by planar implantation of boron ions into p-MCT. The typical dark currents were about 4–7 nA at the reverse bias voltage of 150 mV. The differential resistance R was up to R0 = 1.6×107 Ω zero bias voltage, which corresponded to R0A ∼70 Ω ·cm2 and to the maximal value Rmax = 2.1 × 108 Ω. The bidirectional TDI deselecting ROIC was developed and fabricated by 1.0-μm CMOS technology with two metallic and two polysilicon layers.The IR FPAs were free of defect channels and have the average values of responsivity Sλ = 2.27×108 V/W, the detectivity Dλ * = 2.13 × 1011 cm × Hz1/2 × Wt1, and the noise equivalent temperature difference NETD = 9 mK. |
| Related Links | http://www.degruyter.com/downloadpdf/j/oere.2010.18.issue-3/s11772-010-1021-z/s11772-010-1021-z.xml http://www.degruyter.com/dg/viewarticle.fullcontentlink:pdfeventlink/$002fj$002foere.2010.18.issue-3$002fs11772-010-1021-z$002fs11772-010-1021-z.pdf/s11772-010-1021-z.pdf?t:ac=j$002foere.2010.18.issue-3$002fs11772-010-1021-z$002fs11772-010-1021-z.xml |
| ISSN | 12303402 |
| e-ISSN | 18963757 |
| DOI | 10.2478/s11772-010-0021-z |
| Journal | Opto-Electronics Review |
| Issue Number | 3 |
| Volume Number | 18 |
| Language | English |
| Publisher | Walter de Gruyter GmbH |
| Publisher Date | 2010-05-14 |
| Access Restriction | Open |
| Subject Keyword | Opto-electronics Review Optics Ir Fpa Hybrid Assembly Thermal Imaging Lwir Journal: Opto-Electronics Review, Issue- 1-4 |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Science Electrical and Electronic Engineering Radiation |
