NDLI: Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

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Influence of near-surface graded-gap layers on electrical characteristics of MIS-structures based on MBE grown HgCdTe

Content Provider	Scilit
Author	Voitsekhovskii, A. V. Nesmelov, S. N. Dzyadukh, S. M. Varavin, V. S. Dvoretskii, S. A. Mikhailov, N. N. Sidorov, Yu.G. Yakushev, M. V.
Copyright Year	2010
Abstract	The paper examines influence of near-surface graded-gap layers on electrical characteristics of MIS-structures fabricated on heteroepitaxial Hg1−xCdxTe films grown by molecular beam epitaxy (MBE). Two types of insulators, i.e., two-layer SiO2/Si3N4 and anodic oxide films were used. As it is seen from the depth and width of the valley on the C-V characteristics, the capacitance is found to vary in a wide range, in contrast to the structures without graded-gap layers. It is shown that the graded-gap layer under MIS-structures with x = 0.22 effectively reduces the tunnelling generation via deep levels and increases a lifetime of minority carriers in the space charge region and its differential resistance. The properties of the HgCdTe-insulator interfaces are studied.
Related Links	http://www.degruyter.com/downloadpdf/j/oere.2010.18.issue-3/s11772-010-1029-4/s11772-010-1029-4.xml http://www.degruyter.com/dg/viewarticle.fullcontentlink:pdfeventlink/$002fj$002foere.2010.18.issue-3$002fs11772-010-1029-4$002fs11772-010-1029-4.pdf/s11772-010-1029-4.pdf?t:ac=j$002foere.2010.18.issue-3$002fs11772-010-1029-4$002fs11772-010-1029-4.xml
ISSN	12303402
e-ISSN	18963757
DOI	10.2478/s11772-010-0029-4
Journal	Opto-Electronics Review
Issue Number	3
Volume Number	18
Language	English
Publisher	Walter de Gruyter GmbH
Publisher Date	2010-05-22
Access Restriction	Open
Subject Keyword	Opto-electronics Review Applied Physics Hgcdte Mis-structures Graded-gap Layer Journal: Opto-Electronics Review, Issue- 1-3
Content Type	Text
Resource Type	Article
Subject	Materials Science Electrical and Electronic Engineering Radiation

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