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Transport studies of MBE-grown InAs/GaSb superlattices
| Content Provider | Scilit |
|---|---|
| Author | Szmulowicz, F. Haugan, H. J. Elhamri, S. Brown, G. J. Mitchel, W. C. |
| Copyright Year | 2010 |
| Abstract | We report on the results of transport studies of MBE-grown InAs/GaSb superlattices. We demonstrate that the in-plane mobility is limited by interface roughness scattering by showing that, as a function of InAs layer width L, the in-plane mobility behaves as μ ∝ L5.3, which closely follows the classic sixth power dependence expected from theory for interface-roughness-limited mobility. Fits to the mobility data indicate that, for one monolayer surface roughness, the roughness correlation length is about 35 Å. Next, we show that the in-plane carrier mobility in InAs/GaSb superlattices is inversely proportional to carrier density in n- and p-type samples, the result of screened interface roughness scattering. |
| Related Links | http://www.degruyter.com/downloadpdf/j/oere.2010.18.issue-3/s11772-010-1027-6/s11772-010-1027-6.xml http://www.degruyter.com/dg/viewarticle.fullcontentlink:pdfeventlink/$002fj$002foere.2010.18.issue-3$002fs11772-010-1027-6$002fs11772-010-1027-6.pdf/s11772-010-1027-6.pdf?t:ac=j$002foere.2010.18.issue-3$002fs11772-010-1027-6$002fs11772-010-1027-6.xml |
| ISSN | 12303402 |
| e-ISSN | 18963757 |
| DOI | 10.2478/s11772-010-0027-6 |
| Journal | Opto-Electronics Review |
| Issue Number | 3 |
| Volume Number | 18 |
| Language | English |
| Publisher | Walter de Gruyter GmbH |
| Publisher Date | 2010-05-14 |
| Access Restriction | Open |
| Subject Keyword | Opto-electronics Review Applied Physics Inas/gasb Superlattice Mobility Transport Interface Roughness Scattering Journal: Opto-Electronics Review, Vol- 18 |
| Content Type | Text |
| Resource Type | Article |
| Subject | Materials Science Electrical and Electronic Engineering Radiation |
