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| Content Provider | Royal Society of Chemistry (RSC) |
|---|---|
| Author | Archanjo, B. S. Cotta, M. A. Senna, C. A. Li, A. Vasconcelos, T. L. Tizei, L. H. G. Ugarte, D. Oliveira, D. S. |
| Copyright Year | 2015 |
| Abstract | Semiconductor nanowires oriented along the [211] direction usually present twins parallel to their axis. For group IV nanowires this kind of twin allows the formation of a catalyst–nanowire interface composed of two equivalent {111} facets. For III–V nanowires, however, the twin will generate two facets with different polarities. In order to keep the <211> orientation stable, a balance in growth rates for these different facets must be reached. We report here the observation of stable, micron-long <211>-oriented InGaP nanowires with a spontaneous core–shell structure. We show that stacking fault formation in the crystal region corresponding to the {111}A facet termination provides a stable NW/NP interface for growth along the <211> direction. During sample cool down, however, the catalyst migrates to a lateral {111}B facet, allowing the growth of branches perpendicular to the initial orientation. In addition to that, we show that the core–shell structure is non-concentric, most likely due to the asymmetry between the facets formed in the NW sidewall; this effect generates stress along the nanowire, which can be relieved through bending. |
| Starting Page | 12722 |
| Ending Page | 12727 |
| Page Count | 6 |
| File Format | HTM / HTML PDF |
| ISSN | 20403364 |
| Volume Number | 7 |
| Issue Number | 29 |
| Journal | Nanoscale |
| DOI | 10.1039/c5nr02747k |
| Language | English |
| Publisher | Royal Society of Chemistry |
| Access Restriction | Open |
| Subject Keyword | Indium gallium phosphide Nanowire NW Stacking fault |
| Content Type | Text |
| Resource Type | Article |
| Subject | Nanoscience and Nanotechnology |
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