NDLI: Zn-dopant dependent defect evolution in GaN nanowires

Content Provider	Royal Society of Chemistry (RSC)
Author	Yang, Bing Jiang, Xin Yuan, Fang Wang, Yujia Liu, Baodan Liu, Qingyun Zhuang, Hao
Copyright Year	2015
Abstract	Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3–5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (103), (101) and (201), as well as Type I stacking faults (…ABABBCB…), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3–5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (…ABABABA…) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.
Starting Page	16237
Ending Page	16245
Page Count	9
File Format	HTM / HTML PDF
ISSN	20403364
Volume Number	7
Issue Number	39
Journal	Nanoscale
DOI	10.1039/c5nr04771d
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Cubic crystal system Extrinsic semiconductor Transmission electron microscopy Wurtzite Nucleation Dopant Stacking fault Crystal twinning Gallium nitride Chemical vapor deposition
Content Type	Text
Resource Type	Article
Subject	Nanoscience and Nanotechnology

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

Stabilization of a Ga-adlayer structure with the zincblende stacking sequence in the GaN(0 0 0 −1) surface at the nanoscale

Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates

Vertically p–n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD

Internal structure of multiphase zinc-blende wurtzite gallium nitride nanowires.

Nanoscale imaging of freestanding nitrogen doped single layer graphene

Nanometer size effects in nucleation, growth and characterization of templated CdS nanocrystal assemblies

Radiative recombination mechanisms in individual wurtzite ZnSe nanowires with a defect-free single-crystalline microstructure

Catalytic growth and characterization of single-crystalline aluminum nitride nanowires

Synthesis of p-type gallium nitride nanowires for electronic and photonic nanodevices (2003)

Zn-dopant dependent defect evolution in GaN nanowires

Similar Documents

Stabilization of a Ga-adlayer structure with the zincblende stacking sequence in the GaN(0 0 0 −1) surface at the nanoscale

Growth of gallium nitride and indium nitride nanowires on conductive and flexible carbon cloth substrates

Vertically p–n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD

Internal structure of multiphase zinc-blende wurtzite gallium nitride nanowires.

Nanoscale imaging of freestanding nitrogen doped single layer graphene

Nanometer size effects in nucleation, growth and characterization of templated CdS nanocrystal assemblies

Radiative recombination mechanisms in individual wurtzite ZnSe nanowires with a defect-free single-crystalline microstructure

Catalytic growth and characterization of single-crystalline aluminum nitride nanowires

Synthesis of p-type gallium nitride nanowires for electronic and photonic nanodevices (2003)

Zn-dopant dependent defect evolution in GaN nanowires