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| Content Provider | Royal Society of Chemistry (RSC) |
|---|---|
| Author | Dusastre, Vincent Henshaw, Geoff S. Williams, David E. |
| Copyright Year | 1996 |
| Abstract | The response of gas-sensitive resistors fabricated from solid solution compounds of the form (CrNbO4)x(Sn1 –ySbyO2)1 –x(0 ⩽ x⩽ 1;y = 0,0.01, 0.05) to carbon monoxide, propane and water have been studied. An n-p transition occurred at a CrNbO4 stoichiometry that increased with the level of Sb5+ doping. XPS demonstrated the surface enrichment of Nb5+ in the CrNbO4 substituted compounds and a Fermi level shift of 0.6 eV between the n-type and p-type materials. The n-type compounds exhibited higher sensitivity to CO and C3H8 that the p-type compounds, which was rationalised using a compensated semiconductor conduction model in which both the energy of the surface acceptor state relative to the conduction band, and the surface acceptor state density determined the sensitivity. Both the n-type and p-type compounds exhibited a resistance decrease upon exposure to water, and this was explained in terms of the relative energies of the trap states Oads– and OHads: OHads lies higher in energy than Oads– in the n-type but lower in the p-type compounds. |
| Starting Page | 1351 |
| Ending Page | 1354 |
| Page Count | 4 |
| File Format | |
| ISSN | 09599428 |
| Volume Number | 6 |
| Issue Number | 8 |
| Journal | Journal of Materials Chemistry |
| DOI | 10.1039/JM9960601351 |
| Language | English |
| Publisher | Royal Society of Chemistry |
| Access Restriction | Open |
| Subject Keyword | Fermi Solid solution Carbon monoxide Propane Stoichiometry Dopant Fermi level Electronvolt Extrinsic semiconductor Semiconductor Valence and conduction bands |
| Content Type | Text |
| Resource Type | Article |
| Subject | Chemistry Materials Chemistry |
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