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Structural, optical and electronic properties of a Mg incorporated GaN nanowall network

Content Provider	Royal Society of Chemistry (RSC)
Author	Gupta, Mukul Shivaprasad, S. M. Nayak, Sanjay Kumar
Copyright Year	2017
Abstract	We report the growth of a Mg incorporated GaN nanowall network (NwN) by using a plasma assisted molecular beam epitaxy (PA-MBE) system that was characterized by photoluminescence (PL) spectroscopy, Raman spectroscopy, high-resolution X-ray diffraction (HR-XRD), X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). We record a PL enhancement (≈3.2 times) in nominally and moderately Mg incorporated GaN compared to that of an undoped NwN. Two distinct (and broad) blue luminescence peaks appear at 2.95 and 2.70 eV for the heavily Mg incorporated (1020 atoms per cm3) GaN, of which the 2.95 eV peak is sensitive to annealing. The incorporated Mg concentration is estimated to be 1020 atoms per cm3 while retaining its band edge emission at ≈3.4 eV. XPS valence band spectra shows a shift in the Fermi level towards Valence Band Maximum (VBM) and the increase in Mg flux confirms the formation of p-type GaN. Mg accumulation at the nanowall surface and the GaN/Al2O3 interface was observed from SIMS measurements.
Starting Page	25998
Ending Page	26005
Page Count	8
File Format	HTM / HTML PDF
ISSN	20462069
Volume Number	7
Issue Number	42
Journal	RSC Advances
DOI	10.1039/c7ra02315d
Language	English
Publisher	Royal Society of Chemistry
Access Restriction	Open
Subject Keyword	Spectroscopy Extrinsic semiconductor Photoluminescence Luminescence Electronvolt Ion Photoemission spectroscopy Raman spectroscopy Gallium nitride Blood plasma X-ray crystallography Fermi level Molecular beam epitaxy Valence and conduction bands SIMS Raman X-ray photoelectron spectroscopy Nucleic acid thermodynamics
Content Type	Text
Resource Type	Article
Subject	Chemistry Chemical Engineering

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