NDLI: Single-Event-Upset Sensitivity Analysis on Low-Swing Drivers

Content Provider	PubMed Central
Author	Mahyuddin, Nor Muzlifah Russell, Gordon
Copyright Year	2014
Abstract	Technology scaling relies on reduced nodal capacitances and lower voltages in order to improve performance and power consumption, resulting in significant increase in layout density, thus making these submicron technologies more susceptible to soft errors. Previous analysis indicates a significant improvement in SEU tolerance of the driver when the bias current is injected into the circuit but results in increase of power dissipation. Subsequently, other alternatives are considered. The impact of transistor sizes and temperature on SEU tolerance is tested. Results indicate no significant changes in Q crit when the effective transistor length is increased by 10%, but there is an improvement when high temperature and high bias currents are applied. However, this is due to other process parameters that are temperature dependent, which contribute to the sharp increase in Q crit. It is found that, with temperature, there is no clear factor that can justify the direct impact of temperature on the SEU tolerance. Thus, in order to improve the SEU tolerance, high bias currents are still considered to be the most effective method in improving the SEU sensitivity. However, good trade-off is required for the low-swing driver in order to meet the reliability target with minimal power overhead.
Related Links	http://dx.doi.org/10.1155/2014/876435
Starting Page	876435
File Format	PDF
ISSN	23566140
e-ISSN	1537744X
Journal	The Scientific World Journal
Volume Number	2014
Language	English
Publisher	Hindawi Publishing Corporation
Publisher Date	2014-01-01
Access Restriction	Open
Rights Holder	Hindawi Publishing Corporation
Subject Keyword	Biochemistry, Genetics and Molecular Biology(all) Environmental Science(all) Medicine(all) Research in Higher Education
Content Type	Text
Resource Type	Article
Subject	Medicine Biochemistry, Genetics and Molecular Biology Environmental Science

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