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Influence of Substrate and Gate Insulator on the Thermal Characteristics of $β-Ga_{2}O_{3}$ Field-Effect Transistors: A Simulation Study
| Content Provider | MDPI |
|---|---|
| Author | Liu, Chaochao He, Hao Zhou, Xinlong Liu, Wenjun |
| Copyright Year | 2022 |
| Description | $β-Ga_{2}O_{3}$ suffers from extremely poor thermal conductivity, resulting in a severe self-heating effect. Integrating $β-Ga_{2}O_{3}$ with high-thermal-conductivity foreign substrates is one of the promising solutions to improve the thermal performance of $β-Ga_{2}O_{3}$ devices. However, the gate insulator also plays an important role in the device’s thermal characteristics. In this work, we analyze the influence of the thermal conductivity of the substrate and gate insulator and the associated thermal boundary conductance (TBC) on the channel peak temperature $(T_{MAX}$) investigated by the coupled 3-D thermal simulation. It reveals that AlN and SiC substrate could be sufficient compared to the expensive diamond substrate for substrate integration thermal management scheme. And the reduced $T_{MAX}$ becomes more prominent with the high thermal conductivity gate insulator (e.g., h-BN) than with the conventional $Al_{2}O_{3}$ gate insulator. Furthermore, the $T_{MAX}$ of the device maintains a very high temperature as the TBC is very low (10 $MWm^{−2}K^{−1}$), indicating the importance of optimizing TBC. Our results provide useful insights into the thermal management of $β-Ga_{2}O_{3}$ devices. |
| Starting Page | 2323 |
| e-ISSN | 20799292 |
| DOI | 10.3390/electronics11152323 |
| Journal | Electronics |
| Issue Number | 15 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-07-26 |
| Access Restriction | Open |
| Subject Keyword | Electronics Hardware and Architecturee Β-ga2o3 Thermal Management Device Simulation |
| Content Type | Text |
| Resource Type | Article |
