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Effect of $(AlGa)_{2}O_{3}$ back barrier on device characteristics of $β-Ga_{2}O_{3}$ metal-oxide-semiconductor field-effect transistors with Si-implanted channel
| Content Provider | Scilit |
|---|---|
| Author | Kamimura, Takafumi Nakata, Yoshiaki Higashiwaki, Masataka |
| Copyright Year | 2021 |
| Description | Journal: Japanese Journal of Applied Physics An $(AlGa)_{2}O_{3}$ back barrier was employed for $Ga_{2}O_{3}$ metal-oxide-semiconductor field-effect transistors (MOSFETs) with a Si-implanted $n-Ga_{2}O_{3}$ channel layer. The insertion of the back barrier led to strong confinement of electrons in the channel layer, and a shallower pinch-off characteristic with shifting a threshold gate voltage by +8 V was attained for the MOSFET with the back barrier compared to the conventional one without it. The excellent gate controllability represented by a subthreshold slope of 129 mV/decade was also achieved for the back-barrier MOSFET; whereas it was 337 mV/decade for the non-back-barrier one. |
| Related Links | https://iopscience.iop.org/article/10.35848/1347-4065/abe3a4/pdf |
| ISSN | 00214922 |
| e-ISSN | 13474065 |
| DOI | 10.35848/1347-4065/abe3a4 |
| Journal | Japanese Journal of Applied Physics |
| Issue Number | 3 |
| Volume Number | 60 |
| Language | English |
| Publisher | IOP Publishing |
| Publisher Date | 2021-02-19 |
| Access Restriction | Open |
| Subject Keyword | Journal: Japanese Journal of Applied Physics Peripheral Vascular Disease |
| Content Type | Text |
| Resource Type | Article |
| Subject | Physics and Astronomy Engineering |
