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The Effect of Gate Work Function and Electrode Gap on Wide Band-Gap Sn-Doped $α-Ga_{2}O_{3}$ Metal–Semiconductor Field-Effect Transistors
| Content Provider | MDPI |
|---|---|
| Author | Ro, Han-Sol Kang, Sung Ho Jung, Sungyeop |
| Copyright Year | 2022 |
| Description | We present technology computer aided design (TCAD) results for wide band-gap Sn-doped $α-Ga_{2}O_{3}$ metal–semiconductor field-effect transistors (MESFETs). In particular, the effect of gate work function and electrode gap length on the electrical characteristics is demonstrated for a thorough understanding of the behavior of such devices. The gate work function significantly affects the reverse bias drain current under the gate-current dominant regime, whereas a gate-source/drain gap larger than 0.1 µm has a negligible effect on the drain current. |
| Starting Page | 913 |
| e-ISSN | 19961944 |
| DOI | 10.3390/ma15030913 |
| Journal | Materials |
| Issue Number | 3 |
| Volume Number | 15 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-01-25 |
| Access Restriction | Open |
| Subject Keyword | Materials Metal–semiconductor Field-effect Transistors Work Function Device Structure Technology Computer-aided Design Numerical Simulation |
| Content Type | Text |
| Resource Type | Article |
