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Magnetron Sputter-Deposited $β-Ga_{2}O_{3}$ Films on c-Sapphire Substrate: Effect of Rapid Thermal Annealing Temperature on Crystalline Quality
| Content Provider | MDPI |
|---|---|
| Author | Pech, Sakal Kim, Sara Kim, Nam-Hoon |
| Copyright Year | 2022 |
| Description | Gallium oxide $(Ga_{2}O_{3}$) is a semiconductor with a wide bandgap of ~5.0 eV and large breakdown voltages (>8 $MV·cm^{−1}$). Among the crystal phases of $Ga_{2}O_{3}$, the monoclinic $β-Ga_{2}O_{3}$ is well known to be suitable for many device applications because of its chemical and thermal stability. The crystalline quality of polycrystalline $β-Ga_{2}O_{3}$ films on c-plane sapphire substrates was studied by rapid thermal annealing (RTA) following magnetron sputtering deposition at room temperature. Polycrystalline $β-Ga_{2}O_{3}$ films are relatively simple to prepare; however, their crystalline quality needs enhancement. The β-phase was achieved at 900 °C with a crystallite size and d-spacing of 26.02 and 0.2350 nm, respectively, when a mixture of ε- and β-phases was observed at temperatures up to 800 °C. The strain was released in the annealed $Ga_{2}O_{3}$ films at 900 °C; however, the clear and uniform orientation was not perfect because of the increased oxygen vacancy in the film at that temperature. The improved polycrystalline $β-Ga_{2}O_{3}$ films with dominant (−402)-oriented crystals were obtained at 900 °C for 45 min under a $N_{2}$ gas atmosphere. |
| Starting Page | 140 |
| e-ISSN | 20796412 |
| DOI | 10.3390/coatings12020140 |
| Journal | Coatings |
| Issue Number | 2 |
| Volume Number | 12 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-01-25 |
| Access Restriction | Open |
| Subject Keyword | Coatings Coatings and Films Β-ga2o3 Magnetron Sputtering C-sapphire Substrate Rapid Thermal Annealing |
| Content Type | Text |
| Resource Type | Article |
