NDLI: Two-dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field-effect transistor

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Two-dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field-effect transistor

The Journal of Engineering

Two-dimensional potential, electric field and drain current model of source pocket hetero gate dielectric triple work function tunnel field-effect transistor

Content Provider	IET Digital Library
Author	Sharma, Dheeraj Raad, Bhagwan Ram Yadav, Dharmendra Singh Kondekar, Pravin Nigam, Kaushal
Abstract	Low ON current and conduction for the negative gate-to-source voltage are the major drawbacks of the steep subthreshold slope tunnel field-effect transistor (TFET). Low work function on the source side of gate contact, high-κ gate dielectric and highly doped layer (delta doping) helps to enhance the ON current of the device. Whereas, low work function of gate electrode on the drain side and low-κ gate dielectric is used to eliminate the problem of conduction for the negative gate-to-source voltage. In the same concern, an analytical model for potential distribution of tri metal hetero gate dielectric delta doped TFET is developed by solving the two-dimensional (2D) Poisson's equation. Moreover, the extraction of electric field is performed by the developed potential model. However, model of drain current for the device is based on the Kane's band-to-band tunnelling generation rate. Finally, the verification of the developed model is performed with the 2D technology computer aided design ATLAS simulation results.
Starting Page	11
Ending Page	16
Page Count	6
Volume Number	12
e-ISSN	17500443
Issue Number	Issue 1, Jan (2017)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/12/1
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2016.0351
Journal	Micro & Nano Letters
Publisher Date	2017-01-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	2D Poisson Equation 2D Technology Computer Aided Design ATLAS Simulation Design And Testing Drain Current Model Electric Field Electric Field Extraction Equivalent Circuit Field Effect Device Field Effect Transistors Gate Contact Gate Electrode High-k Dielectric Thin Film High-κ Gate Dielectric Kane Band-to-band Tunnelling Generation Rate Low Work Function Mathematical Analysis Negative Gate-to-source Voltage Poisson Equation Semiconductor Device Model Semiconductor Device Modelling Source Pocket Hetero Gate Dielectric Triple Work Function Tunnel Field-effect Transistor Steep Subthreshold Slope Tunnel Field-effect Transistor Tri Metal Hetero Gate Dielectric Delta Doped TFET Tunnel Transistors Two-dimensional Poisson Equation Two-dimensional Potential Work Function
Content Type	Text
Resource Type	Article

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