NDLI: Improving metal/n-Ge ohmic contact by inserting TiO2 deposited by PEALD

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Improving metal/n-Ge ohmic contact by inserting TiO2 deposited by PEALD

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The Journal of Engineering

Improving metal/n-Ge ohmic contact by inserting TiO2 deposited by PEALD

Content Provider	IET Digital Library
Author	Zhang, Yi Liu, Yan Han, Genquan Liu, Huan Hao, Yue
Abstract	A simple method is used to improve metal/n-germanium (Ge) contact characteristics by inserting plasma-enhanced atomic layer deposition (PEALD) deposited titanium dioxide (TiO2)/GeO x . Cross-sectional transmission electron microscope results confirm the thickness of the 30 PEALD cycles TiO2/GeO x is 1.62/1.38 nm. By inserting 1.62/1.38 nm TiO2/GeO x between aluminium (Al) and n-Ge, current densities increased by about 1800 times at −0.1 V compared with contacts without insertion layer (IL). With IL, ρ c of 9.52 × 10−3 Ω cm2 for Al/IL/n-Ge with an n-Ge concentration of 6 × 1016 cm−3 was achieved. ρ c reduced by a factor 83 compared with no TiO2 IL, and it also shows 4.72 times reduction compared with ρ c extracted from samples inserting thermal ALD-deposited TiO2. X-ray photoelectron spectroscopy (XPS) results shows that the valence state for GeO x was 3.682, thus Ge surface may be passivated. It was also determined by XPS that TiO2 was oxygen-vacancies rich, which may dope TiO2 and may contribute to lower tunnelling resistance. All of the characteristics will be beneficial for low contact resistivity.
Starting Page	801
Ending Page	803
Page Count	3
Volume Number	13
e-ISSN	17500443
Issue Number	Issue 6, Jun (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/13/6
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0776
Journal	Micro & Nano Letters
Publisher Date	2018-06-01
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Al-TiO2-GeOx-Ge Aluminium Atomic Layer Deposition Auger Spectroscopy Chemical Vapour Deposition Contact Resistance Contact Resistance, Contact Potential, And Work Function Contact Resistivity Cross-sectional Transmission Electron Microscopy Current Densities Current Density Electrical Property of Metal-insulator-semiconductor Structures Electrical Property of Metal-nonmetal Contacts Electron Spectroscopy For Chemical Analysis Elemental Semiconductor Epitaxy Germanium Germanium Compound Interstitials And Vacancies Metal-Insulator-Semiconductor Structure MIS Structure Ohmic Contact Ohmic Contacts Oxygen Vacancies Passivation PEALD Photoelectron Photoelectron Spectra of SemiConductor And Insulator Plasma Application in Manufacturing And Material Processing Plasma Material Processing Plasma-enhanced Atomic Layer Deposition Semiconductor Metal Boundaries Semiconductor Metal InterFace Semiconductor Technology Structure Surface State Density Surface Topography Measurement Surface Treatment And Coating Technique Thin Film Growth Titanium Compound Titanium Dioxide Transmission Electron Microscopy Tunnelling Tunnelling Resistance Tunnelling: General (electronic Transport) Vacancies (Crystal) Valence Band Valence State Voltage -0.1 V X-Ray Photoelectron Spectroscopy XPS
Content Type	Text
Resource Type	Article

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