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| Content Provider | IET Digital Library |
|---|---|
| Author | Yin, Minqi Sun, Hongwen Wang, Haibin |
| Abstract | Pattern density is an important factor in UV nanoimprint stamp design. Various pattern densities may affect the thickness of the residual layer and its uniformity. This work investigated the effect of pattern density as well as other stamp parameters, including stamp material, stamp thickness and cavity height, on residual layer thickness (RLT), contact pressure, and imprint quality. Two kinds of stamps were designed for simulation, one with detached uniform lines and the other with adjacent non-uniform lines. Results show that areas near the edges of the imprint field in all stamps are the first to achieve high contact pressure. The study observed that long imprint time enables a reduction of RLT after a stable period, particularly obvious with high density. For a long-term imprint of patterns with various densities, flowing behaviour of the residual resist was revealed. These conclusions are beneficial for making guidelines for stamp design in UV nanoimprint lithography. |
| Starting Page | 887 |
| Ending Page | 891 |
| Page Count | 5 |
| Volume Number | 13 |
| e-ISSN | 17500443 |
| Issue Number | Issue 6, Jun (2018) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/mnl/13/6 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/mnl.2017.0502 |
| Journal | Micro & Nano Letters |
| Publisher Date | 2018-06-01 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Adjacent Nonuniform Line Cavity Height Contact Pressure Flowing Behaviour Imprint Field Imprint Quality Lithography Nanolithography Pattern Density Photoresists Residual Layer Thickness Residual Resist Semiconductor Technology Soft Lithography Stamp Material Stamp Thickness Ultraviolet Lithography UV Nanoimprint Lithography UV Nanoimprint Stamp Design |
| Content Type | Text |
| Resource Type | Article |
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