NDLI: Effects of nitrogen flow rate in ohmic contacts on InAlN/GaN heterostructures

Content Provider	IET Digital Library
Author	Geum, Dae Myeong Shin, Seungheon Park, Min Su Jang, Jae Hyung
Abstract	The effects of nitrogen (N2) flow rate during high-temperature annealing were investigated for Ti/Al/Ni/Au ohmic metallisation on InAlN/GaN heterostructures. The samples annealed at 900°C for 100 s at a 30 SCCM N2 flow rate had the highest ohmic contact performance: a contact resistance of 0.12 Ω·mm, transfer length of 0.31 μm and specific contact resistivity of 3.42 × 10−7 Ω·cm2.
Starting Page	1545
Ending Page	1547
Page Count	3
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 21, Oct (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/21
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.2061
Journal	Electronics Letters
Publisher Date	2014-10-06
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Aluminium Aluminium Compound Annealing Processes Annealing Processes in Semiconductor Technology Contact Resistance Contact Resistance, Contact Potential, And Work Function Electrical And Magnetic Property (related to Treatment Condition) Electrical Property of Metal-nonmetal Contacts Electrical Property of Semiconductor-To-Semiconductor Contacts Gallium Compound Gold Heat And Thermomechanical Treatments Heterojunction HeteroStructure High-temperature Annealing High-temperature Technique III-V SemiConductor InAlN-GaN Indium Compound Metallisation Metallisation And Interconnection Technology N2 Nickel Nitrogen Nitrogen Flow Rate Effect Ohmic Contact Performance Ohmic Contacts Ohmic Metallisation P-N Junctions SCCM N2 Flow Rate Semiconductor Heterojunction Semiconductor Junction Semiconductor Metal Boundaries Semiconductor Metal InterFace Specific Contact Resistivity Temperature 900 DegC Ti-Al-Ni-Au Titanium Transfer Length Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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