NDLI: Superlattice-like Zn15Sb85/Ga30Sb70 thin films for low power and ultrafast phase change memory application

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Superlattice-like Zn15Sb85/Ga30Sb70 thin films for low power and ultrafast phase change memory application

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The Journal of Engineering

Superlattice-like Zn15Sb85/Ga30Sb70 thin films for low power and ultrafast phase change memory application

Content Provider	IET Digital Library
Author	Zhang, Rui Hu, Yifeng Chou, Qingqian Lai, Tianshu Zhu, Xiaoqin
Abstract	In this study, the amorphous-to-crystalline transitions of superlattice-like (SLL) Zn15Sb85/Ga30Sb70 thin films were investigated by in situ film resistance measurement. The thermal stability, resistance and band gap of the SLL Zn15Sb85/Ga30Sb70 thin film perform well. The data retention temperature for 10 years increases from 177°C of [Zn15Sb857/Ga30Sb703] to 220°C of [Zn15Sb852/Ga30Sb708]. The X-ray diffraction patterns show the presence of a large amount of Sb phase in the Zn15Sb85/Ga30Sb70 thin films, which causes a rapid phase transition. The surface morphology is observed by atomic force microscopy, which indicates that the thickness of Ga30Sb70 in the SLL thin films can affect the grain size and inhibit the crystallisation process. For the Zn15Sb85/Ga30Sb70 thin films, an ultra-short switching time of around 2 ns is achieved. These results indicate that the SLL Zn15Sb85/Ga30Sb70 thin films have a promised application in phase change memory.
Starting Page	379
Ending Page	383
Page Count	5
Volume Number	14
e-ISSN	17500443
Issue Number	Issue 4, Apr (2019)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/mnl/14/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/mnl.2018.5483
Journal	Micro & Nano Letters
Publisher Date	2019-04-03
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amorphous-to-crystalline Transitions Atomic Force Microscopy Band Gap Crystallisation Crystallisation Process Data Retention Temperature Electrical Resistivity Energy Gap Epitaxy Gallium Compound Grain Size In Situ Film Resistance Measurement Memory Circuit Microstructure Phase Change Material Phase Change Memories Rapid Phase Transition Solid Surface Structure Solid-liquid Transitions Structure Superlattice-like Thin Film Surface Modulator/Detector Array Thermal Stability Thin Film Thin Film Growth Ultra-short Switching Time Ultrafast Phase Change Memory Application X-Ray Diffraction X-Ray Diffraction Pattern Zinc Compound Zn15Sb85-Ga30Sb70
Content Type	Text
Resource Type	Article

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