NDLI: Low-leakage 4H-SiC junction barrier Schottky rectifier with sandwich P-type well

Content Provider	IET Digital Library
Author	Wang, Ying Yu, Cheng hao Miao, Zhi kun Shan, Ming guang
Abstract	4H-SiC junction barrier Schottky (JBS) rectifier with sandwich P-type well (SPW JBS) is investigated by simulation. For this structure, the top and bottom of P+ grids are replaced by low-doped P (LDP) region based on the common JBS rectifier. The forward and reverse characteristics of SPW JBS rectifier have been compared with those of common JBS rectifier at different temperatures. The reverse current density of SPW JBS rectifier is about 2.4 × 10−5 times of common JBS rectifier at −800 V bias voltage. The upper LDP of SPW JBS is helpful to give a reduction in forward voltage drop. The spreading current and tunnelling current of SPW JBS rectifier are lower, because the depletion layer width in lower LDP is larger than that in P+ grid region at the same reverse voltage. As a result, the breakdown voltage of SPW JBS rectifier increases by 83.5% compared with that of common JBS rectifier. The on/off (1 V/ −500 V) current ratios of SPW JBS and common JBS rectifiers are 3.8 × 107 and 1.2 × 103, respectively. In addition, the figure of merit of SPW JBS rectifier is 347, which is two times larger than that of common JBS rectifier.
Starting Page	672
Ending Page	677
Page Count	6
ISSN	17554535
Volume Number	8
e-ISSN	17554543
Issue Number	Issue 5, May (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-pel/8/5
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-pel.2014.0332
Journal	IET Power Electronics
Publisher Date	2015-01-21
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Breakdown Voltage Current Density Depletion Layer Width Electric Potential Figure of Merit Forward Voltage Drop Junction And Barrier Diode LDP Region Leakage Current Low-doped P Region Low-leakage 4H-silicon Carbide Junction Barrier Schottky Rectifier On/off Current Ratio P+ Grid Region Rectifier Reverse Current Density Reverse Voltage Sandwich P-type Well Schottky Diode SiC Silicon Compound Spreading Current SPW JBS Rectifier Tunnelling Current Voltage -800 V Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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