NDLI: Single and double-gate based AlGaN/GaN MOS-HEMTs for the design of low-noise amplifiers: a comparative study

Content Provider	IET Digital Library
Author	Panda, Deepak Kumar Singh, Rajan Lenka, Trupti Ranjan Pham, Thi Tan Velpula, Ravi Teja Jain, Barsha Bui, Ha Quoc Thang Nguyen, Hieu Pham Trung
Abstract	In this study, a 60 nm gate length double-gate AlGaN/GaN/AlGaN metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed and different electrical characteristics, such as DC, small-signal, radio-frequency (RF) and high-frequency noise performances of the devices are characterised through TCAD device simulations. The results of double-gate MOS-HEMT are compared with the TCAD simulation results as well as with available experimental data of single-gate AlGaN/GaN MOS-HEMT having a similar gate length available from the literature. It is observed that the double-gate AlGaN/GaN/AlGaN MOS-HEMT shows good sub-threshold slope, improved ON current, short-channel effect immunity, improved RF and noise performance. A look-up table-based Verilog-A model is developed for both devices and the models are incorporated into the Cadence EDA tool to utilise the proposed device in circuit simulations. The Verilog-A model is applied to design a 1–20 GHz wideband feedback cascode low-noise amplifier (LNA). Performance variability of LNA due to single- and double-gate MOS-HEMT is also investigated.
Starting Page	1018
Ending Page	1025
Page Count	8
ISSN	1751858X
Volume Number	14
e-ISSN	17518598
Issue Number	Issue 7, Oct (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/14/7
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2020.0015
Journal	IET Circuits, Devices & Systems
Publisher Date	2020-08-17
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	AlGaN-GaN-AlGaN Aluminium Compound Amplifiers Cadence EDA Tool Circuit Simulations Design And Testing Double-gate MOS-HEMT Electrical Characteristic Equivalent Circuit Field Effect Device Frequency 1.0 GHz to 20.0 GHz Gallium Compound Hardware Description Languages High Electron Mobility Transistors High-frequency Noise Performances III-V SemiConductor LNA Look-up Table Low Noise Amplifier Low-noise Amplifier Metal-oxide-semiconductor High-electron-mobility Transistor Microwave Amplifier Microwave Field Effect Transistors Noise Performance Performance Variability RF Performance Semiconductor Device Model Semiconductor Device Modelling Short-channel Effect Immunity Single-gate MOS-HEMT Size 60.0 Nm Solid State Microwave Circuit And Device Sub-threshold Slope Table Lookup TCAD Device Simulations Technology CAD (electronics) Verilog-A Model Wide Band Gap SemiConductor Wideband Feedback Cascode
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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