NDLI: Noise performance of an AlGaN/GaN monolithic microwave integrated circuit (MMIC) low-noise amplifier under laser exposure

Content Provider	IET Digital Library
Author	Caddemi, Alina Cardillo, Emanuele Patanè, Salvatore Triolo, Claudia
Abstract	The aim of this study is to disclose how the performance of a gallium nitride (GaN)-based X-band low-noise amplifier is modified by applying a blue-ray (404 nm) laser beam. The tested amplifier employs an aluminium gallium nitride/GaN (AlGaN/GaN) high electron mobility transistor on silicon carbide whose dc and noise behaviour have been first analysed with and without optical illumination. Mild improvement of the gain together with severe degradation of the noise figure has occurred during light exposure with the amplifier operating according to the recommended bias condition. Conversely, pronounced improvement of the performance has taken place when the amplifier has been biased close to the transistor pinch-off point. The results presented in this work follow a previous intense activity carried out on devices and amplifiers based on gallium arsenide technology.
Starting Page	409
Ending Page	413
Page Count	5
ISSN	17518725
Volume Number	14
e-ISSN	17518733
Issue Number	Issue 5, Apr (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-map/14/5
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-map.2019.0776
Journal	IET Microwaves, Antennas & Propagation
Publisher Date	2020-01-16
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	AlGaN-GaN Aluminium Compound Amplifiers Blue-ray Laser Beam Field Effect Device Gallium Compound High Electron Mobility Transistor High Electron Mobility Transistors III-V SemiConductor Laser Exposure Light Exposure Low Noise Amplifier Microwave IC MMIC MMIC Power Amplifiers Monolithic Microwave Integrated Circuit Low-noise Amplifier Noise Figure Noise Performance Optical Illumination Tested Amplifier Transistor Pinch-off Point Wavelength 404.0 Nm Wide Band Gap SemiConductor X-band Low-noise Amplifier
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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