NDLI: Open-circuit voltage decay: moving to a flexible method of characterisation

Content Provider	IET Digital Library
Author	Lemaire, Antoine Perona, Arnaud Caussanel, Matthieu Duval, Herve Dollet, Alain
Abstract	Open-circuit voltage decay (OCVD) is a method to characterise minority carrier effective lifetime ( τ eff ). It is non-destructive, simple and low-cost. It has been mainly used in silicon p-n junctions. τ eff is not only a very important parameter to optimise device design but also to supervise process steps. It is not the only parameter we can obtain by OCVD. Due to the intrinsic space charge region capacitance of a p-n junction, the doping level of the lowest-doped region ( N l ) and built-in potential ( V bi ) are extractable. Moreover, it is also possible to obtain the shunt resistance ( R sh ) value when it has a significant effect on the p-n junction behaviour. The authors first applied the well-established one-diode model in a transient regime to simulate OCVD signal. In a second step, they used an optimisation algorithm to fit the experimental curve of a silicon diode to extract τ eff , N l , V bi and R sh . These values were compared to those obtained from C–V and I–V. Results are promising and demonstrate for the first time, the flexibility of the OCVD method. It opens up the perspective for the development of add-on features of the method and for measuring short lifetime.
Starting Page	947
Ending Page	955
Page Count	9
ISSN	1751858X
Volume Number	14
e-ISSN	17518598
Issue Number	Issue 7, Oct (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-cds/14/7
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-cds.2020.0123
Journal	IET Circuits, Devices & Systems
Publisher Date	2020-07-22
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Built-in Potential Carrier Lifetime Design And Testing Device Design Optimization Doping Level Doping Profiles Elemental Semiconductor Equivalent Circuit Flexible Method Intrinsic Space Charge Region Capacitance Junction And Barrier Diode Lowest-doped Region Minority Carrier Effective Lifetime Minority Carriers OCVD Method OCVD Signal Simulation One-diode Model Open-circuit Voltage Decay Optimisation Optimisation Algorithm Optimisation Technique P-n Junction Behaviour P-n Junctions Semiconductor Device Model Semiconductor Device Modelling Semiconductor Diode Semiconductor Doping Shunt Resistance Value Silicon Silicon Diode Silicon P-n Junctions Space Charge Transient Regime
Content Type	Text
Resource Type	Article
Subject	Control and Systems Engineering Electrical and Electronic Engineering

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