NDLI: 10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current

Content Provider	IET Digital Library
Author	Hao, Ronghui Wu, Dongdong Fu, Kai Song, Liang Chen, Fu Zhao, Jie Du, Zhongkai Zhang, Bingliang Wang, Qilong Yu, Guohao Cheng, Kai Cai, Yong Zhang, Xinping Zhang, Baoshun
Abstract	Normally off p-gallium nitride (GaN) gate high-electron-mobility transistors (HEMTs) on silicon substrate were fabricated with hydrogen plasma treatment technology, which features a high-resistivity cap layer (HRCL) at the access region. With hydrogen plasma treatment at the access region, the normally off operation was obtained with a threshold voltage of +2.5 V based on the linear extrapolation of the transfer curve. The fabricated HRCL-HEMT with a gate width of 49.7 mm exhibits a maximum drain current of 10 A at V GS = 8 V and a high off-state breakdown voltage of 567 V at V GS = 0 V with substrate grounded. Meanwhile, the HRCL-HEMT also shows low-gate leakage current of 1.3 × 10−7 and 3.3 × 10−10 A/mm at V GS = 8 V and = −30 V, respectively. The positive threshold voltage, high drain current, high-breakdown voltage and low-gate leakage show the potential of HRCL-HEMT for power switching applications.
Starting Page	848
Ending Page	849
Page Count	2
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 13, Jun (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/13
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2017.3981
Journal	Electronics Letters
Publisher Date	2018-05-17
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Current 10.0 A Fabricated HRCL-HEMT Field Effect Device Gallium Compound GaN High Electron Mobility Transistors High-breakdown Voltage High-resistivity Cap Layer High-threshold Voltage Hydrogen Plasma Treatment Technology III-V SemiConductor Leakage Current Low-gate Leakage Current Nanofabrication Nanometre-Scale Semiconductor Fabrication Technology Normally off P-GaN Gate HEMT Off-state Breakdown Voltage P-gallium Nitride Gate High-electron-mobility Transistors Positive Threshold Voltage Power Switching Application Semiconductor Device Breakdown Silicon Silicon Substrate Size 49.7 Mm Voltage -30.0 V Voltage 2.5 V Voltage 567.0 V Voltage 8.0 V Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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