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Dynamic ternary CAM for hardware search engine

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Dynamic ternary CAM for hardware search engine

Content Provider	IET Digital Library
Author	Vinogradov, V. Ha, Joowan Lee, Changhyuk Molnar, A. Hong, Sang Hoon
Abstract	A five-transistor dynamic ternary content addressable memory (CAM) is presented for high-density data search applications. The data path and the search path are separated to avoid unwanted capacitive coupling at the storage node. To increase the data retention time, the data lines are grounded and dummy search lines are implemented for refresh operations. The proposed CAM cell is fabricated using a 130 nm CMOS process, and occupies an area of 8.99 μm2. A prototype array of 64 × 128 search memory has a retention time of 2.84 ms at room temperature with a 1.2 V supply voltage. The hardware search performance is compared with a conventional software-based search scheme, running on two different systems with clock frequencies of more than an order of magnitude faster. The hardware search engine exhibits comparable search speeds while dissipating only 149 mW.
Starting Page	256
Ending Page	258
Page Count	3
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 4, Feb (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/4
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2013.3849
Journal	Electronics Letters
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	5-transistor Dynamic Ternary Content Addressable Memory Associative Storage CAM Cell Capacitive Coupling Clock Frequencies CMOS Integrated Circuit CMOS Memory Circuit CMOS Process Content-addressable Storage Data Line Data Path Data Retention Time Dummy Search Line Dynamic Ternary CAM Hardware Search Engine Hardware Search Performance High-density Data Search Application HSE Memory Circuit Performance Evaluation Performance Evaluation And Testing Refresh Operation Search Engines Search Memory Search Path Semiconductor Storage Size 13 Nm Software-based Search Scheme Storage Node Supervisory Control Signal TCAM Time 2.84 Ms Transistor Voltage 1.2 V
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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