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Content-Addressable Memory System Using a Nanoelectromechanical Memory Switch
| Content Provider | MDPI |
|---|---|
| Author | Kim, Hyunju Cho, Mannhee Lee, Sanghyun Kwon, Hyug Su Choi, Woo Young Kim, Youngmin |
| Copyright Year | 2022 |
| Description | Content-addressable memory (CAM) performs a parallel search operation by comparing the search data with all content stored in memory during a single cycle, instead of finding the data using an address. Conventional CAM designs use a dynamic CMOS architecture for high matching speed and high density; however, such implementations require the use of system clocks, and thus, suffer from timing violations and design limitations, such as charge sharing. In this paper, we propose a static-based architecture for a low-power, high-speed binary CAM (BCAM) and ternary CAM (TCAM), using a nanoelectromechanical (NEM) memory switch for nonvolatile data storage. We designed the proposed CAM architectures on a 65 nm process node with a 1.2 V operating voltage. The results of the layout simulation show that the proposed design has up to 23% less propagation delay, three times less matching power, and 9.4 times less area than a conventional design. |
| Starting Page | 481 |
| e-ISSN | 20799292 |
| DOI | 10.3390/electronics11030481 |
| Journal | Electronics |
| Issue Number | 3 |
| Volume Number | 11 |
| Language | English |
| Publisher | MDPI |
| Publisher Date | 2022-02-07 |
| Access Restriction | Open |
| Subject Keyword | Electronics Content Addressable Memory (cam) Binary Cam Bcam Ternary Cam Tcam Nanoelectromechanical (nem) Nem Memory Switch |
| Content Type | Text |
| Resource Type | Article |
