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| Content Provider | IET Digital Library |
|---|---|
| Author | Zhang, Hua Bin Cai, Min He, Xiaoyong Wu, Haijun Li, Zhengpin Tang, F. |
| Abstract | A broadband and high-K monolithic passive balun for silicon-based radio frequency integrated circuits (RFICs) are presented. It utilises the top level thick Cu metal and adopts a 16-side geometry. The proposed balun is designed and fabricated with a 0.13-μm CMOS mixed-signal 1P6M process. The measured results show that the amplitude imbalance is < 0.2 dB and the phase imbalance is within 4° from the frequency range of 0.1–7 GHz. Compared with the typical octagonal balun, the proposed design achieves the same coupling coefficients K and attains an enhancement in the transmission efficiency S 21 within the frequency range of 0.1–20 GHz, and the consumed chip area is reduced by 3%. |
| Starting Page | 288 |
| Ending Page | 290 |
| Page Count | 3 |
| ISSN | 00135194 |
| Volume Number | 50 |
| e-ISSN | 1350911X |
| Issue Number | Issue 4, Feb (2014) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/50/4 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2013.4083 |
| Journal | Electronics Letters |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | 16-Side Geometry Amplitude Imbalance Baluns Broadband Passive Balun CMOS Integrated Circuit CMOS Mixed-signal 1P6M Process Copper Elemental Semiconductor Field Effect MMIC Frequency 0.1 GHz to 20 GHz High-K Monolithic Passive Balun Microwave IC Phase Imbalance RFIC Silicon Silicon-based Radio Frequency Integrated Circuit Size 0.13 Mum Thick Cu Metal Transmission Efficiency UHF Integrated Circuit Waveguide And Microwave Transmission Line Component |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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