NDLI: Dopingless super-steep impact ionisation MOS (dopingless-IMOS) based on work-function engineering

Content Provider	IET Digital Library
Author	Singh, S. Kondekar, P. N.
Abstract	A unique approach is proposed to realise dopingless impact-ionisation MOS (dopingless-IMOS) using work-function engineering of electrodes to form charge plasma as a substitute for doping. Using appropriate work-function difference between metal electrodes and intrinsic silicon film with thickness less than the intrinsic Debye length (L D) leads to charge plasma formation, in turn this charge plasma induces uniform p-type source and n-type drain. The proposed dopingless-IMOS is simulated using two-dimensional technology computer-aided design (TCAD) Sentaurus to compare its electrical characteristics with conventional IMOS having identical device dimensions and bias conditions. Dopingless-IMOS (DL-IMOS) offers a simple fabrication process flow as it avoids the need for ion implantation, photo masking and complicated thermal budget. Hence, it is highly immune to process variations, doping control issues and random dopant fluctuations and it retains the inherent distinctive advantages of IMOS.
Starting Page	888
Ending Page	889
Page Count	2
ISSN	00135194
Volume Number	50
e-ISSN	1350911X
Issue Number	Issue 12, Jun (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/50/12
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.1072
Journal	Electronics Letters
Publisher Date	2014-05-29
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Charge Plasma Charge Plasma Formation Design And Testing Dopingless Super-steep Impact Ionisation MOS Dopingless-IMOS Electrode Elemental Semiconductor Equivalent Circuit Impact Ionisation Impact-ionisation Metal Oxide Semiconductor Field Effect Transistor Insulated Gate Field Effect Transistors Intrinsic Debye Length Intrinsic Silicon Film Ion Implantation Lithography Masks Metal Electrode MOSFET N-type Drain P-type Source Photo Masking Random Dopant Fluctuation Semiconductor Device Modelling Semiconductor Technology Silicon Technology CAD (electronics) Two-dimensional TCAD Sentaurus Work-function Engineering
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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