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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zhenxiang Yi Xiaoping Liao Hao Yan |
| Copyright Year | 2001 |
| Abstract | In this letter, a novel microwave power sensor is proposed to accomplish frequency compensation for 1-20-GHz application. Compared with traditional power sensor, this design has two extra power compensation ports in order to adjust the output voltage. This device is designed and fabricated with GaAs MMIC process. The measured return loss of three ports is less than -26 dB over 1-20 GHz. The output voltage increases with the incident power and the sensitivity is close to 0.115, 0.111, and 0.106 mV/mW at 1, 10, and 20 GHz, respectively. Frequency compensation is performed and the output voltage is compensated to that of 10 GHz. Clearly, when the incident power is fixed, the curve after compensation is flat and the voltage does not change with the frequency of the signal anymore. |
| Sponsorship | IEEE Sensors Council |
| Starting Page | 2936 |
| Ending Page | 2937 |
| Page Count | 2 |
| File Size | 1439847 |
| File Format | |
| ISSN | 1530437X |
| Volume Number | 14 |
| Issue Number | 9 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-01-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Sensors Electromagnetic heating Voltage measurement Gallium arsenide Transmission line measurements Microwave communication MEMS Frequency compensation microwave power sensor GaAs MMIC |
| Content Type | Text |
| Resource Type | Article |
| Subject | Instrumentation Electrical and Electronic Engineering |
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