NDLI: Technical noise in K-band low-noise cryogenic amplifier

Content Provider	IET Digital Library
Author	Parker, S. R.
Abstract	The performance of a 15–29 GHz low-noise high-electron-mobility transistor amplifier at room and cryogenic temperatures is reported. The close-to-carrier technical noise is measured for frequency offsets from 100 mHz to 100 kHz and the effect of adjusting the DC power biasing is investigated. An order of magnitude improvement in intrinsic phase noise is achieved by optimising the bias settings away from manufacturer specifications, giving a single-sideband phase noise power spectral density at 1 Hz offset of −100 dBc/Hz and −105 dBc/Hz for a 26.6 GHz carrier at room temperature and 6.5 K, respectively.
Starting Page	539
Ending Page	541
Page Count	3
ISSN	00135194
Volume Number	52
e-ISSN	1350911X
Issue Number	Issue 7, Apr (2016)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/52/7
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2015.4024
Journal	Electronics Letters
Publisher Date	2016-02-25
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplifiers Close-to-carrier Technical Noise Cryogenic Electronics Cryogenic Temperatures DC Power Biasing Field Effect Device Frequency 15 GHz to 29 GHz High Electron Mobility Transistors Intrinsic Phase Noise K-band Low Noise Cryogenic Amplifier Low Noise Amplifier Low Noise High-electron-mobility Transistor Amplifier Microwave Amplifier Microwave Field Effect Transistors Phase Noise Room Temperatures Single-sideband Phase Noise Power Spectral Density Solid State Microwave Circuit And Device Temperature 293 K to 298 K Temperature 6.5 K
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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