NDLI: Cryogenic dual-temperature low noise amplifier in K band

Content Provider	IET Digital Library
Author	Pasian, Marco Chambon, Cedric Bozzi, Maurizio Perregrini, Luca Rayet, Remi Fauroux, Benoit Rawson, Steve
Abstract	Future ground stations will require a high level of operational flexibility and, for this reason, the possibility to adjust their receiving performance (i.e. signal-over-noise) is beneficial. This study presents an approach to achieve this flexibility based on a dual-temperature low-noise amplifier, which can be normally operated at room temperature (300 K), reducing the operational and maintenance costs, and at cryogenic temperature (103 K) only when required, for example, for critical mission supports. To demonstrate the effectiveness of this solution, a dual-temperature K-band low-noise amplifier is designed, manufactured and measured for the first time. Critical aspects, such as the stability of the electromagnetic response over the entire temperature range, and the reduction of the thermal load from the entire assembly, fundamental for a fast transition between room and cryogenic temperatures, are discussed. In particular, the low-noise amplifier exhibits a minimum gain of 20 dB over the entire working bandwidth (18–22 GHz) and a maximum noise figure of 2.2 at 300 K and 1.4 at 103 K, with a transition time between room and cryogenic temperature of <120 min because of a total thermal load lower than 1 W.
Starting Page	642
Ending Page	648
Page Count	7
ISSN	17518725
Volume Number	8
e-ISSN	17518733
Issue Number	Issue 9, Jun (2014)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/iet-map/8/9
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/iet-map.2013.0523
Journal	IET Microwaves, Antennas & Propagation
Publisher Date	2014-02-21
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Amplifiers Cryogenic Dual-temperature Low Noise Amplifier Cryogenic Temperature Cryogenic Temperatures Cryogenics Dual-temperature K-band Low-noise Amplifier Dual-temperature Low-noise Amplifier Electromagnetic Response Frequency 18 GHz to 22 GHz Ground Stations Low Noise Amplifier Low-noise Amplifier Maintenance Cost Noise Figure Operational Cost Operational Flexibility Receiving Performance Signal-over-noise Temperature 103 K Temperature 300 K Thermal Load Transition Time
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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