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| Content Provider | IET Digital Library |
|---|---|
| Author | Sung, H. K. Wang, C. Kim, N. Y. |
| Abstract | A comparative analysis of the properties of vertical light-emitting diodes (VLEDs) fabricated using different surface treatment schemes was conducted. Compared with a conventional VLED, a light output power increase of 24.8% for an injection current of 350 mA was achieved by an n-type-gallium nitride (GaN)-based VLED with a thin undoped GaN layer and microsized protrusions produced by krypton fluoride laser irradiation using an energy density of 600 mJ/cm2. This was accomplished without noticeable degradation of the electrical properties of the device. Further, potassium hydroxide wet etching of the VLED surface increased the light output power gain to 47.3% for the same injection current. |
| Starting Page | 1041 |
| Ending Page | 1043 |
| Page Count | 3 |
| ISSN | 00135194 |
| Volume Number | 52 |
| e-ISSN | 1350911X |
| Issue Number | Issue 12, Jun (2016) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/52/12 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2016.0507 |
| Journal | Electronics Letters |
| Publisher Date | 2016-05-13 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Current 350 MA Electrical Property Energy Density Etching Gallium Compound GaN III-V SemiConductor Krypton Fluoride Laser Irradiation Laser Irradiation Treatment Light Emitting Diode Microsized Protrusion Optical Fabrication Optical Property Potassium Hydroxide Wet Etching Radiation Effect (semiconductor Technology) Radiation Hardening (electronics) Semiconductor Technology Surface Topography Measurement Surface Treatment Scheme Vertical Light-emitting Diode VLED Wetting Wide Band Gap SemiConductor |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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