NDLI: TIGBT with emitter-embedded gate for low turn-on loss and low electro-magnetic interference noise

Content Provider	IET Digital Library
Author	Li, Ping Cheng, Junji Chen, Xing bi
Abstract	A trench insulated gate bipolar transistor (TIGBT) with emitter-embedded gate is proposed. The emitter-embedded gate could increase the gate-to-emitter capacitance C GE without affecting the miller capacitance C GC. Therefore, the ratio of C GC to C GE is significantly reduced, which suppresses the gate self-charging effect effectively. As a result, an excellent controllability on the turn-on dI CE/dt of the TIGBT and the dV KA/dt of the free-wheeling diode (FWD) is obtained. The simulation results based on a 1.2 kV TIGBT show that, in comparison with the conventional TIGBT, the lower limit of the reverse-recovery dV KA/dt of the FWD can be reduced by 91.2% and the turn-on loss could be reduced by 53.1% under the same dV KA/dt.
Starting Page	1108
Ending Page	1110
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 19, Sep (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/19
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.5679
Journal	Electronics Letters
Publisher Date	2018-08-22
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Bipolar Transistor Capacitance Design And Testing Electromagnetic Interference Emitter-embedded Gate Equivalent Circuit Free-wheeling Diode FWD Gate Self-charging Effect Gate-to-emitter Capacitance Insulated Gate Bipolar Transistors Insulated Gate Field Effect Transistors Low Electro-magnetic Interference Noise Low Turn-on Loss Miller Capacitance Semiconductor Device Model Semiconductor Device Modelling TIGBT Trench Insulated Gate Bipolar Transistor Voltage 1.2 KV
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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