NDLI: 220–325 GHz high-isolation SPDT switch in InP DHBT technology

Content Provider	IET Digital Library
Author	Shivan, T. Hossain, M. Stoppel, D. Weimann, N. Boppel, S. Doerner, R. Heinrich, W. Krozer, V.
Abstract	A broadband single-pole-double-throw (SPDT) switch is presented covering 220–325 GHz in 800 nm transferred substrate InP DHBT technology. The SPDT switch configuration employs shunt-topology. The circuit achieves an isolation of >36 dB within the band with very low DC power of 9 mW, benefitting from the low intrinsic capacitance of the transistors. This is the highest reported isolation for wideband SPDT switches covering 220–325 GHz. This three-stage SPDT switch also demonstrates the highest isolation of 12 dB per stage in this frequency range.
Starting Page	1222
Ending Page	1224
Page Count	3
ISSN	00135194
Volume Number	54
e-ISSN	1350911X
Issue Number	Issue 21, Oct (2018)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/54/21
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2018.6028
Journal	Electronics Letters
Publisher Date	2018-09-12
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Bipolar Transistor Broadband Single-pole-double-throw Switch Frequency 220.0 GHz to 325.0 GHz Heterojunction Bipolar Transistors High-isolation SPDT Switch III-V SemiConductor Indium Compound InP Low Intrinsic Capacitance Microwave Switches Millimetre Wave Bipolar Transistors Power 9.0 MW Relay And Switches Size 800.0 Nm Solid State Microwave Circuit And Device SPDT Switch Configuration Three-stage SPDT Switch Transferred Substrate InP DHBT Technology Wideband SPDT Switches
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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