NDLI: G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers

Content Provider	IEEE Xplore Digital Library
Author	Paidi, V.K. Griffith, Z. Yun Wei Dahlstrom, M. Urteaga, M. Parthasarathy, N. Munkyo Seo Samoska, L. Fung, A. Rodwell, M.J.W.
Copyright Year	1963
Abstract	We report common-base medium power amplifiers designed for G-band (140-220 GHz) and W-band (75-110 GHz) in InP mesa double HBT technology. The common-base topology is preferred over common-emitter and common-collector topologies due to its superior high-frequency maximum stable gain (MSG). Base feed inductance and collector emitter overlap capacitance, however, reduce the common-base MSG. A single-sided collector contact reduces C_ce and, hence, improves the MSG. A single-stage common-base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.7-dBm output power with 5-dB associated power gain at 172 GHz. A two-stage common-base amplifier exhibited 8.1-dBm output power with 6.3-dB associated power gain at 176 GHz and demonstrated 9.1-dBm saturated output power. Another two-stage common-base amplifier exhibited 11.6-dBm output power with an associated power gain of 4.5 dB at 148 GHz. In the W-band, different designs of single-stage common-base power amplifiers demonstrated saturated output power of 15.1 dBm at 84 GHz and 13.7 dBm at 93 GHz
Sponsorship	IEEE Microwave Theory and Techniques Society
Starting Page	598
Ending Page	605
Page Count	8
File Size	958872
File Format	PDF
ISSN	00189480
Volume Number	53
Issue Number	2
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-02-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Indium phosphide Power amplifiers Broadband amplifiers DH-HEMTs Power generation Heterojunction bipolar transistors Indium gallium arsenide HEMTs High power amplifiers Coplanar waveguides monolithic microwave integrated circuit (MMIC) amplifiers InP heterojunction bipolar transistor millimeter-wave amplifier
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electrical and Electronic Engineering Radiation

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