NDLI: Performance enhancement of fully transparent tin-doped zinc oxide thin-film transistors fabricated by sputtering at low temperature

Content Provider	IET Digital Library
Author	Chen, Zhuofa Han, Dedong Zhao, Nannan Cong, Yingying Wu, Jing Dong, Junchen Zhao, Feilong Huang, Lingling Zhang, Yi Cui, Guolong Liu, Lifeng Zhang, Shengdong Zhang, Xing Wang, Yi
Abstract	Fully transparent tin-doped zinc oxide thin-film transistors (TZO TFTs) were successfully fabricated on glass substrate by radio-frequency sputtering at room temperature. In this reported work, TZO is adopted as the channel layer, SiO2 as the gate insulator and indium tin oxide as gate and source/drain electrodes. The surface morphology and crystallographic structure of the TZO films were evaluated by scanning electron microscopy and X-ray diffraction, respectively. Sn atoms are found to successfully replace Zn sites in the lattice and form stable Sn–O bonds. Sn dopants and adding O2 during the TZO channel deposition can enhance the device performance. The as-fabricated TZO TFT exhibited excellent electrical and optical properties. Hence, TZO can be a promising candidate for the next generation driving active-matrix flat panel displays.
Starting Page	272
Ending Page	274
Page Count	3
ISSN	00135194
Volume Number	51
e-ISSN	1350911X
Issue Number	Issue 3, Feb (2015)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/51/3
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2014.3448
Journal	Electronics Letters
Publisher Date	2015-01-23
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Channel Layer Crystallographic Structure Crystallography Electrical Property Field Effect Device Fully Transparent Tin-doped Zinc Oxide Thin-film Transistors Gate Insulator Glass Substrate II-VI SemiConductor ITO Low Temperature Optical Property Performance Enhancement Radio-frequency Sputtering RF Sputtering Scanning Electron Microscopy Semiconductor Thin Film SiO2 Sn-O Bonds Source-drain Electrodes Sputter Deposition Surface Modulator/Detector Array Temperature 293 K to 298 K Thin Film Transistors Tin TZO Channel Deposition TZO Film TZO TFTs Wide Band Gap SemiConductor X-Ray Diffraction Zinc Compound ZnO:Sn
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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