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| Content Provider | IET Digital Library |
|---|---|
| Author | Konczykowska, A. Jorge, F. Riet, M. Nodjiadjim, V. Duval, B. Mardoyan, H. Estaran, J. M. Adamiecki, A. Raybon, G. Dupuy, J. Y. |
| Abstract | In this Letter, the authors report on the design, optimisation and electrical measurements of a new fully integrated multiplexing selector fabricated in 0.7-µm indium phosphide (InP) double-heterojunction bipolar transistor technology. All parts of the circuit were optimised to obtain 200-Gbit/s class of operation. They present electrical performances at 140 and to a record speed of 212 Gbit/s, highlighting their respective measurement challenges. The power consumption of the circuit is 0.5 and 0.8 W for a differential output amplitude of 240 and 730 mV, respectively. This selector has been successfully used as modulator driver in optical transmission experiments up to 204 Gbit/s. |
| Starting Page | 242 |
| Ending Page | 244 |
| Page Count | 3 |
| ISSN | 00135194 |
| Volume Number | 55 |
| e-ISSN | 1350911X |
| Issue Number | Issue 5, Mar (2019) |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/el/55/5 |
| Alternate Webpage(s) | https://digital-library.theiet.org/content/journals/10.1049/el.2018.7545 |
| Journal | Electronics Letters |
| Publisher Date | 2019-01-24 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Subject Keyword | Bipolar Integrated Circuit Fully Integrated Multiplexing Selector Heterojunction Bipolar Transistors III-V SemiConductor Indium Compound Indium Phosphide Double-heterojunction Bipolar Transistor Technology InP InP DHBT Modulator Driver Multiplexing And Switching in Optical Communication Multiplexing Equipment Multiplexing Selector Optical Communication Equipment Optical Transmission Power 0.5 W Power 0.8 W Voltage 240.0 MV Voltage 730.0 MV |
| Content Type | Text |
| Resource Type | Article |
| Subject | Electrical and Electronic Engineering |
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