NDLI: An Investigation of a Novel Snapback-Free Reverse-Conducting IGBT and With Dual Gates

Content Provider	IEEE Xplore Digital Library
Author	Liheng Zhu Xingbi Chen
Copyright Year	1963
Abstract	A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with an automatically controlled anode gate, named AG-RC-IGBT, is proposed in this paper, wherein a gate on the reverse IGBT is intrinsically off in the forward conduction state and can be automatically turned on in the reverse conduction state. Therefore, bidirectional conduction capability with snapback-free characteristics is achieved in the novel RC-IGBT. Depending on the parameters set on the reverse IGBT, its operation mode can be either like an antiparallel IGBT or like an antiparallel MOS-controlled thyristor (MCT). The antiparallel MCT mode can yield low snapback current densities and low on-state voltages in both forward and reverse conductions. Two-dimensional numerical simulations show that snapback-free characteristics are obtained in the AG-RC-IGBT antiparallel with an IGBT by a 15-μm-wide half-pitch in both forward and reverse conduction states. The antiparallel MCT mode achieves low on-state voltages of 0.97 and 1.6 V at the current density of 200 A/cm² in reverse and forward conduction states, respectively.
Sponsorship	IEEE Electron Devices Society
Starting Page	3048
Ending Page	3053
Page Count	6
File Size	768465
File Format	PDF
ISSN	00189383
Volume Number	59
Issue Number	11
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-11-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Logic gates Current density Bipolar transistors Doping Thyristors turn off Insulated-gate bipolar transistor (IGBT) reverse conducting snapback
Content Type	Text
Resource Type	Article
Subject	Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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