NDLI: 58 GHz CMOS VCO with 16% efficiency

Content Provider	IET Digital Library
Author	Tibenszky, Z. Carta, C. Ellinger, Frank
Abstract	This Letter presents a millimetre-wave CMOS oscillator, which achieves 4.9 dBm output power with 16% peak power efficiency. A phase noise of − 98 dBc / Hz at 1 MHz offset frequency and 26.7% tuning range around 57.5 GHz centre frequency were verified experimentally. To the best knowledge of the authors, the output power, efficiency, and phase noise performance are the best among fundamental CMOS oscillators in the frequency range of interest, while the tuning range is the third highest result reported to date. The circuit occupies a silicon area of ∼ 9000 μ m 2 without the matching inductors on a 22 nm fully depleted silicon on insulator (FD-SOI) CMOS technology.
Starting Page	1301
Ending Page	1303
Page Count	3
ISSN	00135194
Volume Number	56
e-ISSN	1350911X
Issue Number	Issue 24, Nov (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/56/24
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2020.2015
Journal	Electronics Letters
Publisher Date	2020-11-03
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	CMOS Integrated Circuit CMOS VCO Efficiency 16 Percent FD-SOI CMOS Technology Field Effect MIMIC Frequency 1.0 MHz Frequency 58 GHz Fundamental CMOS Oscillator Microwave IC Millimetre Wave Oscillator Millimetre-wave CMOS Oscillator Oscillator Phase Noise Phase Noise Performance Silicon Area Silicon-on-insulator Size 22.0 Nm Voltage-controlled Oscillator
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

74 GHz, 17.2 dBm power amplifier in 45 nm SOI CMOS

Ka-band wideband VCO with LC filtering technique in 65-nm CMOS

100 GHz transformer-coupled quadrature oscillator

275–285 GHz balanced frequency quadrupler chain in 45 nm SOI CMOS

Low phase-noise high output power 176-GHz voltage-controlled oscillator in a 130-nm BiCMOS technology

K-band low-power dual-hybrid-coupling quadrature voltage-controlled oscillator

Wide tuning range low phase noise VCO for V-band application

Compact CMOS LiT VCO achieving 198.6 dBc/Hz FoMA

VCO utilising bilaterally coupled transformer-based resonator

58 GHz CMOS VCO with 16% efficiency

Similar Documents

74 GHz, 17.2 dBm power amplifier in 45 nm SOI CMOS

Ka-band wideband VCO with LC filtering technique in 65-nm CMOS

100 GHz transformer-coupled quadrature oscillator

275–285 GHz balanced frequency quadrupler chain in 45 nm SOI CMOS

Low phase-noise high output power 176-GHz voltage-controlled oscillator in a 130-nm BiCMOS technology

K-band low-power dual-hybrid-coupling quadrature voltage-controlled oscillator

Wide tuning range low phase noise VCO for V-band application

Compact CMOS LiT VCO achieving 198.6 dBc/Hz FoMA

VCO utilising bilaterally coupled transformer-based resonator

58 GHz CMOS VCO with 16% efficiency